DocumentCode :
3605177
Title :
0.34 
AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal
Author :
Hyun-Soo Lee ; Dong Yun Jung ; Youngrak Park ; Jeho Na ; Hyun-Gyu Jang ; Hyoung-Seok Lee ; Chi-Hoon Jun ; Junbo Park ; Sang-Ouk Ryu ; Sang Choon Ko ; Eun Soo Nam
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Volume :
36
Issue :
11
fYear :
2015
Firstpage :
1132
Lastpage :
1134
Abstract :
A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn-ON voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82 μA/mm at -15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; leakage currents; silicon; wide band gap semiconductors; AlGaN; GaN; SBD; Schottky barrier diode; Si; breakdown voltage; current 6.2 A; dry etch condition; forward current; recessed dual anode metal; reverse leakage current; voltage 0.34 V; voltage 2 V; voltage 802 V; Aluminum gallium nitride; Anodes; Gallium nitride; Schottky barriers; Schottky diodes; Wide band gap semiconductors; AlGaN/GaN on Si; Schottky barrier diode (SBD); low turn-on voltage; recess dual anode metal;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2475178
Filename :
7230252
Link To Document :
