DocumentCode
3605485
Title
Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
Author
Ji Chen ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Chih-Hung Pan ; Rui Zhang ; Jen-Chung Lou ; Tian-Jian Chu ; Cheng-Hsien Wu ; Min-Chen Chen ; Ya-Chi Hung ; Yong-En Syu ; Jin-Cheng Zheng ; Sze, Simon M.
Author_Institution
Sch. of Software & Microelectron., Peking Univ., Beijing, China
Volume
36
Issue
11
fYear
2015
Firstpage
1138
Lastpage
1141
Abstract
In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar I-V characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance.
Keywords
ammonia; electrodes; indium compounds; nitrogen; oxygen; resistive RAM; tin compounds; I-V characteristic; ITO electrode layer; RRAM; ammonia treatment; electric field force; indium-tin-oxide-capped resistive random access memory; nitrogen buffering effect; oxygen buffer; redox reaction; Electrodes; Electron devices; Indium tin oxide; Nitrogen; Random access memory; Resistance; Switches; NH3 treatment; RRAM; electric field force; nitrogen buffering effect;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2477163
Filename
7244198
Link To Document