BJT Process Spread Compensation Utilizing Base Recombination Current in Standard CMOS

Author

Bo Wang ; Law, Man Kay ; Bermak, Amine ; Fang Tang

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China

Volume

36

Issue

11

fYear

2015

Firstpage

1111

Lastpage

1113

Abstract

This letter presents a compensation topology which minimizes the inter-/intra-die spread and proportional-to-absolute-temperature (PTAT) drift of the base-emitter voltage (Vbe) of a bipolar junction transistor (BJT). Without using special devices, the base recombination current from a deep-saturated BJT is utilized in this scheme. Before compensation, the Vbe standard deviation (STD) of 15 standalone BJTs measures 3.24 mV at 25 °C with constant external bias currents. After compensation, V_be STD of 30 dies from two batches reduces to 1.8 mV with on-chip bias current. The PTAT drift of V_be as that in typical BJT-based designs are also alleviated.

Keywords

CMOS integrated circuits; bipolar transistors; BJT process spread compensation; PTAT drift; STD; base recombination current; base-emitter voltage; bipolar junction transistor; complementary metal oxide semiconductor; constant external bias current; die spread; on-chip bias current; proportional-to-absolute-temperature drift; standard CMOS; standard deviation; temperature 25 C; voltage 1.8 mV; voltage 3.24 mV; CMOS integrated circuits; Current measurement; Resistors; Standards; Temperature measurement; Topology; Bipolar junction transistor (BJT) process spread; Bipolar junction transistor (BJT) process spread,; Spread compensation; spread compensation; trimless CMOS voltage reference;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2477859

Filename

7254132