• DocumentCode
    3606874
  • Title

    Magnetotunneling Junction Logic and Memory: Low-energy logic paradigms for the next decade and beyond.

  • Author

    Bandyopadhyay, Supriyo ; Atulasimha, Jayasimha

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
  • Volume
    9
  • Issue
    4
  • fYear
    2015
  • Firstpage
    6
  • Lastpage
    12
  • Abstract
    The rapid increase in demand for computational and signal processing prowess calls for radical and revolutionary advances in reliable, energy-efficient, and dense computing architectures. The traditional complementary metal oxide semiconductor (CMOS) field-effect-transistor-based processors are hardly up to the task because of the excessive energy dissipation that they are burdened with and the fact that CMOS is volatile and thereby inherently incapable of storing data indefinitely.
  • Keywords
    CMOS logic circuits; magnetic tunnelling; microprocessor chips; CMOS field-effect-transistor-based processors; complementary metal oxide semiconductor; dense computing architectures; energy dissipation; energy-efficient architecture; low-energy logic paradigms; magnetotunneling junction logic; signal processing; Energy efficiency; Magnetic domain walls; Magnetic domains; Magnetic separation; Magnetic switching; Magnetic tunneling;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1932-4510
  • Type

    jour

  • DOI
    10.1109/MNANO.2015.2472659
  • Filename
    7274692