DocumentCode
3606874
Title
Magnetotunneling Junction Logic and Memory: Low-energy logic paradigms for the next decade and beyond.
Author
Bandyopadhyay, Supriyo ; Atulasimha, Jayasimha
Author_Institution
Dept. of Electr. & Comput. Eng., Virginia Commonwealth Univ., Richmond, VA, USA
Volume
9
Issue
4
fYear
2015
Firstpage
6
Lastpage
12
Abstract
The rapid increase in demand for computational and signal processing prowess calls for radical and revolutionary advances in reliable, energy-efficient, and dense computing architectures. The traditional complementary metal oxide semiconductor (CMOS) field-effect-transistor-based processors are hardly up to the task because of the excessive energy dissipation that they are burdened with and the fact that CMOS is volatile and thereby inherently incapable of storing data indefinitely.
Keywords
CMOS logic circuits; magnetic tunnelling; microprocessor chips; CMOS field-effect-transistor-based processors; complementary metal oxide semiconductor; dense computing architectures; energy dissipation; energy-efficient architecture; low-energy logic paradigms; magnetotunneling junction logic; signal processing; Energy efficiency; Magnetic domain walls; Magnetic domains; Magnetic separation; Magnetic switching; Magnetic tunneling;
fLanguage
English
Journal_Title
Nanotechnology Magazine, IEEE
Publisher
ieee
ISSN
1932-4510
Type
jour
DOI
10.1109/MNANO.2015.2472659
Filename
7274692
Link To Document