DocumentCode
3606943
Title
140 Gb/s Serializer Using Clock Doublers in 90 nm SiGe Technology
Author
Clarke, Ryan ; LeRoy, Mitchell R. ; Raman, Srikumar ; Neogi, Tuhin Guha ; Kraft, Russell P. ; McDonald, John F.
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
50
Issue
11
fYear
2015
Firstpage
2703
Lastpage
2713
Abstract
Many design challenges exist in achieving high frequency clocking for high-speed applications. This paper describes a new clock distribution technique and clocking approach with the use of clock doublers in close proximity to sub-circuits to achieve higher data rates, and in many cases, reduce design complexity and power in serializers. A half-rate 4:1 serializer using this unique frequency doubling clock distribution technique has been implemented in a 90 nm BiCMOS process. The design includes a 210-1 pattern length LFSR with phase shifting logic as the testing circuit and a high bandwidth cascoded output driver. The chip has the dimensions of 1.8 × 2.2 mm 2 and consumes 5.78 W from a -3.4 V supply voltage at 140 Gb/s.
Keywords
BiCMOS digital integrated circuits; Ge-Si alloys; clock distribution networks; frequency multipliers; integrated circuit design; integrated circuit testing; logic circuits; logic design; logic testing; phase shifters; shift registers; BiCMOS process; LFSR; SiGe; cascoded output driver; clock doublers; frequency doubling clock distribution technique; high frequency clocking; linear feedback shift register; phase shifting logic; power 5.78 W; serializer; size 1.8 mm; size 2.2 mm; size 90 nm; subcircuits; testing circuit; voltage 3.4 V; Clocks; Layout; Multiplexing; Resistors; Silicon germanium; Synchronization; Transistors; 4:1 serializer; Clock distribution; LFSR; PRBS; SiGe bipolar technology; clock doubler; frequency doubler; multiplexor;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2015.2472600
Filename
7275065
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