Highly Linear Temperature Sensor Based on 4H-Silicon Carbide p-i-n Diodes

Author

Rao, Sandro ; Pangallo, Giovanni ; Della Corte, Francesco G.

Author_Institution

Dipt. di Ing. dell´Inf., delle Infrastrutture e dell´Energia Sostenibile, Univ. degli Studi Mediterranea, Reggio Calabria, Italy

Volume

36

Issue

11

fYear

2015

Firstpage

1205

Lastpage

1208

Abstract

The linear dependence on temperature of the voltage drop difference measured on two diodes biased at different constant currents has been characterized in a range from room temperature up to 573 K. The realized proportional to absolute temperature sensor shows a good level of linearity and the corresponding rms error lower than 0.3%. Moreover, a maximum sensitivity of 610 μV/K has been obtained, with an extrapolated output converging to 0 V at T = 0 K, in agreement with theory and allowing a single-point temperature calibration.

Keywords

calibration; electric potential; p-i-n diodes; silicon compounds; temperature measurement; temperature sensors; voltage measurement; wide band gap semiconductors; 4H-silicon carbide p-i-n diode; SiC; extrapolation; single-point temperature calibration; temperature 293 K to 298 K; temperature sensor; voltage drop difference measurement; P-i-n diodes; Schottky diodes; Sensitivity; Temperature distribution; Temperature measurement; Temperature sensors; P-i-n diodes; Power semiconductor devices; Silicon carbide; Temperature sensors; p-i-n diodes; power semiconductor devices; silicon carbide; temperature sensors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2481721

Filename

7275118