• DocumentCode
    3607032
  • Title

    On Temperature Dependency of Steep Subthreshold Slope in Dual-Independent-Gate FinFET

  • Author

    Jian Zhang ; Trommer, Jens ; Weber, Walter Michael ; Gaillardon, Pierre-Emmanuel ; De Micheli, Giovanni

  • Author_Institution
    Integrated Syst. Lab., Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
  • Volume
    3
  • Issue
    6
  • fYear
    2015
  • Firstpage
    452
  • Lastpage
    456
  • Abstract
    Dual-independent-gate silicon FinFET has demonstrated a steep subthreshold slope (SS) when a positive feedback induced by weak impact ionization is triggered. In this paper, we study the temperature dependency of the steep SS by characterizing the fabricated device from 100 to 380 K. The measured characteristics of SS show a reduced sensitivity to temperature as compared to conventional MOSFETs. Based on the temperature-dependent characterization, we further analyze the steep-SS characteristics and propose feasible improvements for optimizing the device performance.
  • Keywords
    MOSFET; feedback; impact ionisation; MOSFET; dual-independent-gate FinFET; impact ionization; positive feedback; steep subthreshold slope; temperature 100 K to 380 K; temperature dependent characterization; Feedback; FinFETs; Impact ionization; Schottky barriers; FinFET; Schottky barrier; feedback; impact ionization; steep subthreshold slope;
  • fLanguage
    English
  • Journal_Title
    Electron Devices Society, IEEE Journal of the
  • Publisher
    ieee
  • ISSN
    2168-6734
  • Type

    jour

  • DOI
    10.1109/JEDS.2015.2482123
  • Filename
    7276989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3607032