DocumentCode
3607052
Title
Mist-CVD Grown Sn-Doped 
-Ga2O3 MESFETs
Author
Dang, Giang T. ; Kawaharamura, Toshiyuki ; Furuta, Mamoru ; Allen, Martin W.
Author_Institution
Dept. of Electr. & Comput. EngineeringThe MacDiarmid Inst. for Adv. Mater. & Nanotechnol., Univ. of Canterbury, Christchurch, New Zealand
Volume
62
Issue
11
fYear
2015
Firstpage
3640
Lastpage
3644
Abstract
This paper demonstrates the use of cost-effective solution-processed α-Ga2O3 thin films (TFs) for electronic device applications. MESFETs based on AgOx Schottky diode (SD) gates were fabricated on highly crystalline Sn-doped α-Ga2O3 TFs, grown by mist chemical vapor deposition at atmospheric pressure and a substrate temperature of only 400°C. The rectification ratio and reverse breakdown voltage of typical SDs were 6 × 106 and 19.6 V, respectively. The ON-OFF ratio of the corresponding transistors was 2 × 107. The MESFETs that could withstand drain voltages of up to 48 V were also realized.
Keywords
Schottky diodes; Schottky gate field effect transistors; amorphous semiconductors; chemical vapour deposition; electric breakdown; gallium compounds; semiconductor doping; semiconductor thin films; silver compounds; tin; AgOx; Ga2O3; MESFET; Schottky diode gate; Sn; amorphous semiconductor; atmospheric pressure; chemical vapor deposition; electronic device application; mist-CVD; reverse breakdown voltage; substrate temperature; temperature 400 C; thin film; Chemical vapor deposition; Fabrication; Logic gates; MESFETs; Schottky diodes; Substrates; Ga2O3; Ga?O?; MESFETs; UV sensors; UV sensors.; mist chemical vapor deposition (Mist-CVD); power devices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2477438
Filename
7277044
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