Emission–Diffusion Theory of the MOSFET

An emission-diffusion theory that describes MOSFETs from the ballistic to diffusive limits is developed. The approach extends the Crowell-Sze treatment of metal-semiconductor junctions to MOSFETs and is equivalent to the scattering/transmission model of the MOSFET. This paper demonstrates that the results of the transmission model can be obtained from a traditional, drift-diffusion analysis when the boundary conditions are properly specified, which suggests that the traditional drift-diffusion MOSFET models can also be extended to comprehend ballistic limits.