Quantum-Confined Stark Effect Analysis of GeSn/SiGeSn Quantum Wells for Mid-Infrared Si-Based Electroabsorption Devices Based on Many-Body Theory

Author

Fujisawa, Takeshi ; Saitoh, Kunimasa

Author_Institution

Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan

Volume

51

Issue

11

fYear

2015

Firstpage

1

Lastpage

7

Abstract

Quantum-confined Stark effect (QCSE) of group IV Ge(Sn)/SiGe(Sn) quantum wells (QWs) on Si substrate is analyzed by microscopic many-body theory for mid-infrared (mid-IR) Si-based electroabsorption devices. To show the validity of the theory, QCSE of Ge/SiGe QW is investigated and very good agreement between theory and reported measured results is obtained. Next, the QCSE of GeSn/SiGeSn QWs is analyzed and the QW design for electroabsorption modulators to obtain large extinction ratio in mid-IR region is presented. It is shown that compressive and tensile strained well and barrier layers is preferable to obtain large extinction ratio due to its large conduction band offset.

Keywords

Stark effect; conduction bands; electro-optical modulation; extinction coefficients; germanium compounds; integrated optics; integrated optoelectronics; many-body problems; semiconductor quantum wells; silicon compounds; GeSn-SiGeSn; QCSE; barrier layers; compressive strained well; conduction band offset; electroabsorption modulators; extinction ratio; large extinction ratio; many-body theory; microscopic many-body theory; mid-infrared Si-based electroabsorption devices; quantum wells; quantum-confined Stark effect analysis; tensile strained well; Absorption; Electric fields; Photonic band gap; Silicon; Silicon germanium; Strain; Tin; GeSn quantum wells; Si photonics; electroabsorption modulators; many-body theory; quantum-confined Stark effect;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2015.2488363

Filename

7294623