• DocumentCode
    3607956
  • Title

    Physical Insights on the Ambiguous Metal–Graphene Interface and Proposal for Improved Contact Resistance

  • Author

    Ghatge, Mayur ; Shrivastava, Mayank

  • Author_Institution
    Dept. of Electron. Syst. Eng., Indian Inst. of Sci., Bangalore, India
  • Volume
    62
  • Issue
    12
  • fYear
    2015
  • Firstpage
    4139
  • Lastpage
    4147
  • Abstract
    The ambiguous behavior of metal-graphene interface has been addressed in this paper using density functional theory and nonequilibrium Green´s function formalism. For the first time, the fundamental chemistry of metal-graphene interface, in particular role of sp-hybridized and sp2-hybridized carbon atoms, has been emphasized and discussed in detail in this paper. It was discovered that the sp-hybridized sites at the edge of a graphene monolayer contribute to 40% of current conduction when compared with sp2-hybridized atom sites in the graphene-metal overlap region. Moreover, we highlighted the insignificance of an additional metal layer, i.e., sandwiched contact, due to lacking sp-hybridized carbon sites. A fundamental way of defining the contact resistance, while keeping chemical bonding in mind, has been proposed. The bonding insight has been further used to propose the novel ways of interfacing metal with graphene, which results in a 40% reduction in contact resistance.
  • Keywords
    Green´s function methods; bonds (chemical); contact resistance; density functional theory; electrical conductivity; graphene; monolayers; palladium; Pd-C; chemical bonding; contact resistance; current conduction; density functional theory; graphene monolayer; metal-graphene interface; nonequilibrium Green´s function formalism; sp-hybridized carbon sites; Bonding; Carbon; Contact resistance; Graphene; Palladium; Chemical bonding; contact resistance; edge contacts; graphene; metal-graphene interface; metal???graphene interface; palladium-graphene interface.; palladium???graphene interface;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2481507
  • Filename
    7294650