• DocumentCode
    3608699
  • Title

    Integrated Wideband Self-Interference Cancellation in the RF Domain for FDD and Full-Duplex Wireless

  • Author

    Jin Zhou ; Tsung-Hao Chuang ; Dinc, Tolga ; Krishnaswamy, Harish

  • Author_Institution
    Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
  • Volume
    50
  • Issue
    12
  • fYear
    2015
  • Firstpage
    3015
  • Lastpage
    3031
  • Abstract
    A fully integrated technique for wideband cancellation of transmitter (TX) self-interference (SI) in the RF domain is proposed for multiband frequency-division duplexing (FDD) and full-duplex (FD) wireless applications. Integrated wideband SI cancellation (SIC) in the RF domain is accomplished through: 1) a bank of tunable, reconfigurable second-order high-Q RF bandpass filters in the canceller that emulate the antenna interface´s isolation (essentially frequency-domain equalization in the RF domain) and 2) a linear N-path Gm-C filter implementation with embedded variable attenuation and phase shifting. A 0.8-1.4 GHz receiver (RX) with the proposed wideband SIC circuits is implemented in a 65 nm CMOS process. In measurement, >20 MHz 20 dB cancellation bandwidth (BW) is achieved across frequency-selective antenna interfaces: 1) a custom-designed LTElike 0.780/0.895 GHz duplexer with TX/RX isolation peak magnitude of 30 dB, peak group delay of 11 ns, and 7 dB magnitude variation across the TX band for FDD and 2) a 1.4 GHz antenna pair for FD wireless with TX/RX isolation peak magnitude of 32 dB, peak group delay of 9 ns, and 3 dB magnitude variation over 1.36-1.38 GHz. For FDD, SIC enhances the effective outof-band (OOB) IIP3 and IIP2 to +25-27 dBm and +90 dBm, respectively (enhancements of 8-10 and 29 dB, respectively). For FD, SIC eliminates RX gain compression for as high as -8 dBm of peak in-band (IB) SI, and enhances effective IB IIP3 and IIP2 by 22 and 58 dB.
  • Keywords
    Long Term Evolution; band-pass filters; frequency division multiplexing; frequency selective surfaces; interference suppression; CMOS process; FDD; LTE; RF bandpass filters; RF domain; SIC; frequency 0.8 GHz to 1.4 GHz; frequency selective antenna interfaces; frequency-domain equalization; full duplex wireless; integrated wideband SI cancellation; integrated wideband self-interference cancellation; multiband frequency division duplexing; phase shifting; size 65 nm; transmitter self-interference; Distortion; Noise; Radio frequency; Silicon; Silicon carbide; Wideband; Wireless communication; Blocker; CMOS; SAW-less; SI cancellation (SIC); coexistence; cross-modulation; frequency-division duplexing (FDD); frequency-domain equalization (FDE); full-duplex (FD); receiver (RX); self-interference (SI); transmitter (TX) leakage; triple beat; wideband;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2015.2477043
  • Filename
    7302529