• DocumentCode
    3609178
  • Title

    Ohmic contacts to n-type GaN layer using ECR-sputtered AlN interfacial layer

  • Author

    Terano, A. ; Takei, A. ; Tanaka, S. ; Tsuchiya, T.

  • Author_Institution
    R&D Group, Hitachi Ltd., Kokubunji, Japan
  • Volume
    51
  • Issue
    22
  • fYear
    2015
  • Firstpage
    1823
  • Lastpage
    1824
  • Abstract
    Ohmic contacts to an n-type GaN layer using an electron cyclotron resonance (ECR)-sputtered AlN (thickness of 3 nm)/Ti/Pt/Au electrode without an Al metal layer were investigated. Ohmic characteristics were achieved when annealed at a temperature of 400°C or more. Contact resistance reached a minimum (7.67 × 10-1 Ω-mm) at an annealing temperature of 500°C.
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; contact resistance; electrodes; gallium compounds; gold; ohmic contacts; platinum; semiconductor-metal boundaries; sputtered coatings; titanium; wide band gap semiconductors; AlN-Ti-Pt-Au; ECR-sputtering; GaN; annealing; contact resistance; electrode; electron cyclotron resonance sputtering; interfacial layer; n-type gallium nitride layer; ohmic characteristics; ohmic contact; temperature 400 C; temperature 500 C;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2015.2037
  • Filename
    7308187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3609178