Title :
Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures With and Without Te-Doped Interfaces
Author :
Aziz, Mohsin ; Felix, Jorlandio Francisco ; Al Saqri, Noor ; Jameel, Dler ; Saleh Al Mashary, Faisal ; Albalawi, Hind Mohammed ; Mohammed Abdullah Alghamdi, Haifaa ; Taylor, David ; Henini, Mohamed
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates is presented. Two types of structures, namely, uncompensated and Te compensated, are investigated using current-voltage, capacitance-frequency, conductance-frequency, and deep level transient spectroscopy techniques. Our studies reveal that incorporation of Te at the interface (IMF) causes a degradation of the Te-compensated devices. A higher number of electrical active defects and higher value of interface states are detected in Te-compensated IMF GaSb/GaAs devices compared with as-grown IMF GaSb/GaAs devices.
Keywords :
III-V semiconductors; deep level transient spectroscopy; gallium arsenide; gallium compounds; interface states; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; semiconductor heterojunctions; tellurium; GaAs substrates; GaSb substrates; GaSb-GaAs:Te; MBE grown interfacial misfit GaSb-GaAs heterostructures; Te-compensated devices; Te-doped interfaces; capacitance-frequency spectroscopy; conductance-frequency spectroscopy; current-voltage spectroscopy; deep level transient spectroscopy; electrical active defects; electrical behavior; interface states; Capacitance; Capacitance-voltage characteristics; Current-voltage characteristics; Electron traps; Gallium arsenide; Gallium compounds; Interface states; Capacitance-frequency (C-F); Capacitance???frequency ( $ {C}$ ??? $ {F}$ ); capacitance-voltage (C-V); capacitance???voltage ( $ {C}$ ??? $ {V}$ ); current-voltage (I-V); current???voltage ( $ {I}$ ??? $ {V}$ ); deep level transient spectroscopy (DLTS); deep level transient spectroscopy (DLTS).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2488904
