Title :
Highly piezoelectric MgZr co-doped aluminum nitride-based vibrational energy harvesters [Correspondence]
Author :
Le Van Minh ; Hara, Motoaki ; Yokoyama, Tsuyoshi ; Nishihara, Tokihiro ; Ueda, Masanori ; Kuwano, Hiroki
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fDate :
11/1/2015 12:00:00 AM
Abstract :
The first MgZr co-doped AlN-based vibrational energy harvester (VEH) is presented. (MgZr)AlN, which is a new class of doped AlN, provides high piezoelectricity and cost advantage. Using 13%-(MgZr)-doped AlN for micromachined VEHs, maximum output power of 1.3 μW was achieved with a Q-factor of 400 when resonant frequency, vibration acceleration, load resistance were 792 Hz, 8 m/s2, and 1.1 MΩ, respectively. Normalized power density was 8.1 kW.g-2.m-3. This was one of the highest values among the currently available piezoelectric VEHs.
Keywords :
Q-factor; aluminium compounds; energy harvesting; magnesium compounds; piezoelectric transducers; vibrations; Q-factor; load resistance; normalized power density; piezoelectric VEH; piezoelectric aluminum nitride-based vibrational energy harvesters; resonant frequency; vibration acceleration; Aluminum nitride; Art; III-V semiconductor materials; Power generation; Resonant frequency; Silicon; Yttrium;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2014.006750
