Parametric study of 1310 nm ridge waveguide AlGaInAs-InP semi-conductor laser dynamics

Author

Cantu?Œ??, Horacio I. ; McKee, Andrew ; Eddie, Iain ; Kelly, Anthony E.

Author_Institution

CST-Global Ltd., Hamilton, UK

Volume

9

Issue

6

fYear

2015

Firstpage

341

Lastpage

347

Abstract

Dynamic performance of directly modulated Fabry-Pérot lasers is presented in this work subject to variation of parameters such as cavity length and facet reflectivity. This study is focused on the effect that physical parameters have on the slope of the laser resonance frequency against the square root of the injection current. Temperature variation is also studied to determine modulation bandwidth available for high speed device operation at 10 Gbps. The effect of facet reflectivity and temperature over the laser spectrum and wavelength is also discussed.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical modulation; reflectivity; ridge waveguides; semiconductor lasers; thermo-optical effects; waveguide lasers; AlGaInAs-InP; bit rate 10 Gbit/s; cavity length; directly modulated Fabry-Pérot lasers; facet reflectivity; high speed device operation; injection current; laser resonance frequency; laser spectrum; laser wavelength; modulation bandwidth; ridge waveguide semiconductor laser dynamics; temperature effects; temperature variation; wavelength 1310 nm;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt.2015.0011

Filename

7322400