Title :
Active Detuning of MRI Receive Coils with GaN FETs
Author :
Twieg, Michael ; de Rooij, Michael A. ; Griswold, Mark A.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
Here, we present the use of Gallium Nitride (GaN) FETs as a replacement for PIN diodes in active detuning circuits for magnetic resonance imaging (MRI) receive coils at 63.6 MHz. We use simulated circuit models, benchtop measurements, and imaging experiments to show that GaN FETs perform comparably with a common MRI-compatible PIN diode. The GaN FET-based circuits require orders of magnitude less bias current to operate, effectively eliminating B0 distortion resulting from biasing.
Keywords :
III-V semiconductors; active networks; circuit simulation; circuit tuning; coils; field effect transistors; gallium compounds; magnetic resonance imaging; p-i-n diodes; wide band gap semiconductors; FET; GaN; MRI receive coil; PIN diode; active detuning circuit; benchtop measurement; bias current; field effect transistor; frequency 63.6 MHz; gallium nitride; imaging experiment; magnetic resonance imaging; simulated circuit model; Coils; Field effect transistors; Gallium nitride; Integrated circuit modeling; Magnetic resonance imaging; PIN photodiodes; Radio frequency; Detuning; GaN; MRI; PIN diode; RF coil; eGaN FET;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2015.2495366
