Lateral Graphene Heterostructure Field-Effect Transistor

Author

Moon, J.S. ; Hwa-Chang Seo ; Stratan, Fred ; Antcliffe, Mike ; Schmitz, A. ; Ross, Richard S. ; Kiselev, Andrey A. ; Wheeler, V.D. ; Nyakiti, Luke O. ; Gaskill, D. Kurt ; Kang-Mu Lee ; Asbeck, P.M.

Author_Institution

HRL Labs. LLC, Malibu, CA, USA

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1190

Lastpage

1192

Abstract

We report the first experimental demonstration of a lateral graphene heterostructure field-effect transistor (HFET) at wafer scale, where the graphene heterostructure channel consists of epitaxial graphene (Gr)/fluorographene (GrF)/graphene (Gr). GrF is a widebandgap material, providing a potential barrier to lateral carrier transport. Gate bias modulation of the Gr/GrF/Gr barrier via an electric field effect results in normally-off enhancement-mode graphene HFETs with an ON-OFF switching ratio of 10⁵ at room temperature. These devices also demonstrate excellent current-voltage saturation, providing a potential path for active RF applications.

Keywords

carrier mobility; epitaxial layers; graphene; high electron mobility transistors; semiconductor switches; wide band gap semiconductors; ON-OFF switching ratio; active RF applications; current-voltage saturation; electric field effect; epitaxial graphene; fluorographene; gate bias modulation; graphene heterostructure channel; lateral carrier transport; lateral graphene heterostructure field-effect transistor; normally-off enhancement-mode graphene HFET; temperature 293 K to 298 K; wafer scale; widebandgap material; Graphene; HEMTs; Logic gates; MODFETs; Moon; Temperature measurement; Field-effect transistor (FET); graphene; heterostructure;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2270368

Filename

6558531