Title :
Proton Irradiation as a Screen for Displacement-Damage Sensitivity in Bipolar Junction Transistors
Author :
Arutt, Charles N. ; Warren, Kevin M. ; Schrimpf, Ronald D. ; Weller, Robert A. ; Kauppila, Jeffrey S. ; Rowe, Jason D. ; Sternberg, Andrew L. ; Reed, Robert A. ; Ball, Dennis R. ; Fleetwood, Daniel M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
NPN and PNP bipolar junction transistors of varying sizes are irradiated with 4-MeV protons and 10-keV X-rays to determine the amount of ionization-related degradation caused by protons and calculate an improved estimate of displacement-related degradation due to protons. While different ratios of degradation produced by displacement damage and ionization effects will occur for different device technologies, this general approach, with suitable margin, can be used as a screen for sensitivity to neutron-induced displacement damage. Further calculations are performed to estimate the amount of degradation produced by 1-MeV equivalent neutron displacement damage compared to that produced by the displacement damage due to protons. The results are compared to previous work.
Keywords :
bipolar transistors; NPN; PNP; X-rays; bipolar junction transistors; displacement-damage sensitivity; displacement-related degradation; electron volt energy 1 MeV; electron volt energy 10 keV; electron volt energy 4 MeV; equivalent neutron displacement damage; ionization effects; ionization-related degradation; neutron-induced displacement damage; proton irradiation; protons; Bipolar transistors; Degradation; Protons; Radiation effects; Bipolar junction transistors; displacement damage; non-ionizing energy loss (NIEL); protons; total ionizing dose (TID);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2494584