DocumentCode :
3611874
Title :
Sub-Micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions
Author :
Auden, Elizabeth C. ; Pacheco, Jose L. ; Bielejec, Edward ; Vizkelethy, Gyorgy ; Abraham, John B. S. ; Doyle, Barney L.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
62
Issue :
6
fYear :
2015
Firstpage :
2919
Lastpage :
2925
Abstract :
Displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keV Si + + ions focused in a 40 nm beam spot are used to create damage cascades within 0.25 μm2 areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of 200 keV Si + + ions and 60 keV Li+ ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.
Keywords :
electron-hole recombination; ion beam effects; silicon radiation detectors; Shockley-Read-Hall recombination; Si; beam spot; damage cascades; displacement damage; electron volt energy 200 keV; electron volt energy 60 keV; focused ion beams; heavy ions; localized ion beam induced charge reduction; silicon detector; size 40 nm; submicron resolution; Ion beam effects; Ion beams; Radiation effects; Silicon radiation detectors; Displacement damage; IBIC; ion beam induced charge; silicon detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2015.2495160
Filename :
7348780
Link To Document :
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