Title :
Impact of Cumulative Irradiation Degradation and Circuit Board Design on the Parameters of ASETs Induced in Discrete BJT-based Circuits
Author :
Roche, Nicolas J-H ; Khachatrian, Ani ; Buchner, Stephen P. ; Warner, J.H. ; Hughes, Harold ; McMarr, Patrick ; McMorrow, Dale
Author_Institution :
Sch. of Eng. & Appl. Sci., George Washington Univ., Washington, DC, USA
Abstract :
Circuit parameters and configuration are very important when studying the synergistic effects total dose/SET. We explore a method combining dynamic parameter measurement and spectrum analysis which lead to a better understanding of this complex phenomenon. In this paper symbolic circuit analysis is used to obtain the relationship between input, output and noise injection due to photocurrent generation in the form of a rational function using symbolic variables in the complex frequency domain. This simulation technique was able to predict the impact of (i) total dose level, (ii) circuit parameters, and (iii) the injected energy on the ASET shapes. Basic mechanisms as field collapse and collection efficiency were also predicted and assessed.
Keywords :
bipolar transistor circuits; printed circuit design; radiation effects; ASET; circuit board design; circuit parameters; cumulative irradiation degradation; discrete BJT-based circuits; dynamic parameter measurement; photocurrent generation; spectrum analysis; symbolic circuit analysis; synergistic effects total dose/SET; Analog circuits; Bipolar integrated circuits; Gamma-ray effects; Ion radiation effects; Proton radiation effects; Radiation effects; Radiation hardening (electronics); Single event transients; Analog circuits; bipolar circuits; gamma-ray effects; ion radiation effects; laser; proton radiation effects; radiation effects; radiation hardening; single event mechanisms; single event transients;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2015.2498309