• DocumentCode
    3611907
  • Title

    Interrupted PROGRAM and ERASE Operations for Characterizing Radiation Effects in Commercial NAND Flash Memories

  • Author

    Roach, Austin H. ; Gadlage, Matthew J. ; Duncan, Adam R. ; Ingalls, James D. ; Kay, Matthew J.

  • Author_Institution
    NAVSEA Crane, Crane, IN, USA
  • Volume
    62
  • Issue
    6
  • fYear
    2015
  • Firstpage
    2390
  • Lastpage
    2397
  • Abstract
    A technique of interrupting PROGRAM and ERASE operations is used to extract information about the analog characteristics of commercial NAND Flash memory cells. The number of interrupted PROGRAM or ERASE operations required to cause a bit to change state is shown to be modified by program/erase stress, total ionizing dose, and heavy ion exposure. These modifications allow for the detection of stresses far below the thresholds for memory cell failure.
  • Keywords
    flash memories; integrated circuit reliability; radiation effects; NAND flash memories; erase operations; erase stress; heavy ion exposure; interrupted program; memory cell failure; radiation effects; total ionizing dose; Flash memories; Radiation effects; Floating gate memory; NAND flash; TID; interrupted erase; interrupted program; oxide stress; partial erase; partial program; trapped charge;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2015.2490019
  • Filename
    7348813
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3611907