Title :
Compact modeling for SiGe HBTs
Author_Institution :
Fac. of Inf. Technol. & Syst., Delft Univ. of Technol., Netherlands
fDate :
6/24/1905 12:00:00 AM
Abstract :
Compact modeling techniques that handle peculiar features of SiGe HBTs are presented and analyzed. An appropriate generalization of the Early factor is proposed. Numerical device simulation for two typical SiGe transistor structures with different dopant profiles and Ge mole fractions is used as a basis for the model evaluation.
Keywords :
"Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Semiconductor process modeling","Electron mobility","Charge carrier processes","Numerical simulation","Bipolar transistors","Microelectronics","Voltage"
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003298
