DocumentCode :
3613457
Title :
Low threshold, electrically injected InGaAsP (1.3 /spl mu/m) vertical cavity lasers on GaAs substrates
Author :
J.J. Dudley;D.I. Babic;R. Mirin;L. Yang;B.I. Miller;R.J. Ram;T. Reynolds;E.L. Hu;J.E. Bowers
Author_Institution :
University of California
fYear :
1993
fDate :
6/15/1905 12:00:00 AM
Firstpage :
181
Lastpage :
182
Keywords :
"Gallium arsenide","Mirrors","Threshold current","Temperature","Dielectric substrates","Optical pulses","Indium phosphide","Thermal conductivity","Laboratories","Pulsed laser deposition"
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1993. 51st Annual
Type :
conf
DOI :
10.1109/DRC.1993.1009634
Filename :
1009634
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3613457
