• DocumentCode
    3614951
  • Title

    Finite elements simulations of piezoresistive sensor of blood pressure

  • Author

    P. Sekalski;P. Pons;A. Napieralski

  • Author_Institution
    Dept. of Microelectron. & Comput. Sci., Tech. Univ. of Lodz, Poland
  • fYear
    2003
  • fDate
    6/25/1905 12:00:00 AM
  • Firstpage
    509
  • Lastpage
    512
  • Abstract
    The principle of the piezoresistance effect (PR) of n- and p-Si is presented. A graphical representation of the effect of impurity concentration and temperature on the PR is given. A model of a blood pressure piezoresistive sensor, which is under development in the Laboratory of Architecture and Analyses of Systems, is presented. The FEM simulations of this sensor are used to optimize its layout.
  • Keywords
    "Finite element methods","Piezoresistance","Blood pressure","Capacitive sensors","Stress","Silicon","Conductivity","Electron mobility","Energy states","Resistors"
  • Publisher
    ieee
  • Conference_Titel
    CAD Systems in Microelectronics, 2003. CADSM 2003. Proceedings of the 7th International Conference. The Experience of Designing and Application of
  • Print_ISBN
    966-553-278-2
  • Type

    conf

  • DOI
    10.1109/CADSM.2003.1255136
  • Filename
    1255136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3614951