Electrical Conduction and Reliability in Dual-Layered Graphene Heterostructure Interconnects

Author

Jain, Nikhil ; Murphy, Michael ; Jacobs-Gedrim, Robin ; Shanmugam, Mariyappan ; Fan Yang ; Eui Sang ; Bin Yu

Author_Institution

Coll. of Nanoscale Sci. & Eng., SUNY - Univ. at Albany, Albany, NY, USA

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1311

Lastpage

1313

Abstract

Dual-layer graphene (DLG) interconnects with hexagonal boron nitride (h-BN) as intercalated insulating layer have been demonstrated. The DLG employs graphene grown by chemical vapor deposition process with h-BN serving as a barrier preventing interlayer scattering, which degrades carrier transport in multilayer graphene. The conductive behavior in dual-layer structures is compared with monolayer graphene and randomly stacked bilayer graphene. Reduced resistance is observed in DLG, which exhibits higher current-carrying capacity and maximum power density. In addition, DLG wire is shown to be robust under constant voltage stressing (10 V) at an elevated temperature (150°C) with the mean time to failure ~75 times higher than that of stacked bilayer graphene wires.

Keywords

boron compounds; chemical vapour deposition; graphene; bilayer graphene; carrier transport; chemical vapor deposition; current-carrying capacity; dual-layer structures; dual-layered graphene heterostructure interconnects; electrical conduction; electrical reliability; maximum power density; monolayer graphene; multilayer graphene; temperature 150 C; voltage 10 V; Current density; Electric breakdown; Graphene; Reliability; Resistance; Wires; Graphene; conduction; heterostructure; heterostructure.; hexagonal boron nitride; interconnects;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2360815

Filename

6930711