3618396

Overview of physics of stress-induced voiding in microelectronics metallizations

T.d. Sullivan

2004

6/26/1905 12:00:00 AM

198

198

"Physics","Microelectronics","Metallization","Niobium compounds","Titanium compounds","Artificial intelligence","Thermal stresses","Circuits","Degradation"

ieee

Integrated Reliability Workshop Final Report, 2004 IEEE International

0-7803-8517-9

conf

10.1109/IRWS.2004.1422782

1422782