DocumentCode :
3619452
Title :
A Consistent Parameter Extraction Method for Deep Submicron MOSFETs
Author :
P. Klein
Author_Institution :
Siemens AG, Germany
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
664
Lastpage :
667
Keywords :
"Parameter extraction","MOSFETs","Capacitance","Voltage","Length measurement","Electrical resistance measurement","Capacitance-voltage characteristics","Immune system","Implants","Circuits"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194516
Filename :
1503446
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619452