DocumentCode :
3619460
Title :
On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs
Author :
S.H. Renn;J.L. Pelloie;F. Balestra
Author_Institution :
LPCS (UMR CNRS), ENSERG-INPG, France
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
696
Lastpage :
699
Keywords :
"Degradation","MOSFETs","Stress","Extrapolation","Prediction methods","Hot carriers","MOS devices","Hot carrier effects","Silicon","Semiconductor films"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194524
Filename :
1503454
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619460
