DocumentCode :
3619483
Title :
The impact of the Ge content on the characteristics of strained Si(1-x)Ge(x) epitaxial diodes before and after degradation by high energy particles
Author :
H. Ohyama;E. Simoen;C. Claeys;Y. Takami;K. Hayama;T. Hakata;K. Kobayashi;H. Sunaga;J. Poortmans;M. Caymax
Author_Institution :
Kumamoto National College of Technology, Japan
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
548
Lastpage :
551
Keywords :
"Diodes","Degradation","Epitaxial layers","Boron","Silicon","Substrates","Voltage","Capacitance-voltage characteristics","Capacitance measurement","Current measurement"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503610
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619483
