• DocumentCode
    3619488
  • Title

    Selectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances

  • Author

    D. Klaes;J. Moers;A. Tonnemann;S. Wickenhauser;L. Vescan;M. Marso;P. Kordos;H. Luth;T. Grabolla

  • Author_Institution
    Forschungszentrum J¨
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    568
  • Lastpage
    571
  • Keywords
    "MOSFETs","Etching","Lithography","Epitaxial growth","High speed optical techniques","CMOS technology","Silicon","Parasitic capacitance","Packaging","Anisotropic magnetoresistance"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • DOI
    10.1016/S0040-6090(98)01248-6
  • Filename
    1503615
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619488