مرکز منطقه ای اطلاع رساني علوم و فناوري - High Voltage MOS Transistor with a Folded n- Region for Flash Technology

DocumentCode :

3619511

Title :

High Voltage MOS Transistor with a Folded n- Region for Flash Technology

Author :

F. Hofmann;W. Rosner;E. Landgraf

Author_Institution :

Infineon Technologies AG, Munich, Germany

fYear :

2000

fDate :

6/22/1905 12:00:00 AM

Firstpage :

232

Lastpage :

235

Keywords :

"Voltage","MOSFETs","Flash memory","Etching","Nonvolatile memory","Logic devices","Resists","MOS devices","EPROM","Charge pumps"

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN :

2-86332-248-6

Type :

conf

DOI :

10.1109/ESSDERC.2000.194757

Filename :

1503687

Link To Document :