DocumentCode :
3619514
Title :
A Novel Functional Negative-Differential-Resistance Heterojunction Bipolar Transistor (NDR-HBT)
Author :
W.C. Liu;W.C. Wang;H.J. Pan;C.C. Cheng;S.C. Feng;C.H. Yen;K.W. Lin
Author_Institution :
National Cheng-Kung University, Tainan, Taiwan
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
244
Lastpage :
247
Keywords :
"Heterojunction bipolar transistors","Indium phosphide","Light sources","HEMTs","MODFETs","Sheet materials","Substrates","Current-voltage characteristics","Tungsten","Photoconductivity"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194760
Filename :
1503690
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619514
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