DocumentCode :
3619529
Title :
Fluctuation Limits on Scaling of CMOS SRAMs
Author :
A. Bhavnagarwala;A. Kapoor;J. Meindl
Author_Institution :
Georgia Institute of Technology, Atlanta, GA, USA
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
472
Lastpage :
475
Keywords :
"Fluctuations","Random access memory","Threshold voltage","Semiconductor device modeling","MOSFET circuits","Transistors","Stochastic processes","Doping","Semiconductor device noise","Geometry"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194817
Filename :
1503747
Link To Document :
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