DocumentCode :
3619538
Title :
Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base
Author :
M.R. van den Berg;L.K. Nanver;C.R. de Boer;C.C.G. Visser;J.W. Slotboom
Author_Institution :
Delft University of Technology, The Netherlands
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
612
Lastpage :
615
Keywords :
"Bipolar transistors","Tunneling","Current measurement","MOS capacitors","Charge carrier processes","Temperature dependence","Charge carriers","Anodes","Electric breakdown","MOS devices"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194852
Filename :
1503782
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619538
