• DocumentCode
    3619554
  • Title

    Gate Material Properties Induced 0.25um SRAM Marginality

  • Author

    P. Sallagoity;O. Diop;P. Merenda;M. Juge;F. Oudin;G. Beaulieu;L. Seube;F. Gra

  • Author_Institution
    STMicroelectronics, Rousset, France
  • fYear
    2002
  • fDate
    6/24/1905 12:00:00 AM
  • Firstpage
    575
  • Lastpage
    578
  • Keywords
    "Material properties","Random access memory","Resists","Implants","Amorphous silicon","Failure analysis","Surface morphology","Grain size","Mechanical factors","Crystallization"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2002. Proceeding of the 32nd European
  • Print_ISBN
    88-900847-8-2
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2002.194996
  • Filename
    1503926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619554