• DocumentCode
    3619652
  • Title

    A 50nm channel vertical MOSFET concept incorporating a retrograde channel and a dielectric pocket

  • Author

    A.C. Lamb;L.S. Riley;S. Hall;V.D. Kunz;C.H. de Groot;P. Ashburn

  • Author_Institution
    University of Liverpool, UK
  • fYear
    2001
  • fDate
    6/23/1905 12:00:00 AM
  • Firstpage
    347
  • Lastpage
    350
  • Keywords
    "MOSFET circuits","Dielectrics","Doping","Threshold voltage","Epitaxial layers","Computer science","Computer architecture","Numerical simulation","Epitaxial growth","Logic devices"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2001. Proceeding of the 31st European
  • Print_ISBN
    2-914601-01-8
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2001.195272
  • Filename
    1506654
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619652