DocumentCode :
3619654
Title :
Bulk and contact 1/f noise in GaN TLM structures
Author :
R. Feyaerts;L.K.J. Vandamme;G. Trefan;M.C.J.C.M. Kramer;C. Zellweger
Author_Institution :
Eindhoven University of Technology, The Netherlands
fYear :
2001
fDate :
6/23/1905 12:00:00 AM
Firstpage :
355
Lastpage :
358
Keywords :
"Gallium nitride","Semiconductor device noise","Epitaxial growth","Epitaxial layers","Rapid thermal annealing","Noise measurement","Contact resistance","Conductivity","Electrical resistance measurement","Geometry"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195274
Filename :
1506656
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619654
