DocumentCode :
3619750
Title :
Space-charge limited free carrier transport in semi-insulating III-V compounds
Author :
M. Sudzius;A. Kadys;K. Jarasiunas
Author_Institution :
Dept. of Semicond. Optoelectron., Vilnius Univ., Lithuania
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
11
Lastpage :
14
Abstract :
We demonstrate a novel way to analyse carrier recombination and transport processes in photorefractive semiconductors via kinetics and exposure characteristics of light induced diffraction. The results of a picosecond degenerate four-wave mixing on free carrier gratings in semi-insulating GaAs and InP bulk crystals are discussed. The role of a deep trap recharging in carrier diffusion and recombination is sensitively revealed through a feedback effect of a space-charge field to nonequilibrium carrier transport or directly through linear electrooptic effect.
Keywords :
"III-V semiconductor materials","Radiative recombination","Photorefractive effect","Kinetic theory","Diffraction","Four-wave mixing","Gratings","Gallium arsenide","Indium phosphide","Crystals"
Publisher :
ieee
Conference_Titel :
Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on
Print_ISBN :
0-7803-8668-X
Type :
conf
DOI :
10.1109/SIM.2005.1511374
Filename :
1511374
Link To Document :
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