Modeling of photodiode and measurements of device parameters

In this paper modeling of an inversely biased photodiode is presented. Five parameters d.c. characteristic is investigated and the procedure for calculation of all parameters is developed. Theoretical model is analyzed by simulation and used to test the accuracy of parameter estimation. In experimental application of the developed procedure, all measured data are used in obtaining four parameters. Further study is needed if higher accuracy is wanted for the series photodiode resistance.