DocumentCode :
3621559
Title :
CMOS and interconnect reliability bias-temperature instability and interface traps
Author :
B. Kaczer; Ming-Fu Li
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
683
Lastpage :
683
Keywords :
"Niobium compounds","Titanium compounds","Degradation","Integrated circuit interconnections","Delay effects","Hydrogen","High K dielectric materials","High-K gate dielectrics","Time measurement","Dispersion"
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-9268-X
Type :
conf
DOI :
10.1109/IEDM.2005.1609443
Filename :
1609443
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3621559
