Title :
Single event gate rupture in commercial power MOSFETs
Author :
D.K. Nichols;J.R. Coss;K.P. McCarty
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Several types of power MOSFETs were irradiated with heavy ions to characterize either single event gate rupture (SEGR) or single event burnout (SEB). The implications of the data, showing temperature-dependence and beam angle-dependence for SEGR, are indicated.
Keywords :
"MOSFETs","Testing","Laboratories","FETs","Propulsion","Cyclotrons","Threshold voltage","Iron","Argon","Temperature"
Conference_Titel :
Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on
Print_ISBN :
0-7803-1793-9
DOI :
10.1109/RADECS.1993.316559
