Title :
Anisotropy control in the reactive ion etching of InP using oxygen in methane/hydrogen/argon
Author :
J.E. Schramm;D.I. Babic;E.L. Hu;J.E. Bowers;J.L. Merz
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
This paper contrasts the various uses of oxygen in methane/hydrogen/argon (O/sub 2/:MHA) RIE, in continuous or cyclical processes, for etching deep structures (>5 /spl mu/m). In particular, we show its application to long wave, InGaAsP/InP mirrors for vertical cavity surface emitting laser structures (VCSELs).
Keywords :
"Anisotropic magnetoresistance","Indium phosphide","Oxygen","Hydrogen","Argon","Polymers","Vertical cavity surface emitting lasers","Plasma applications","Sputter etching","Mirrors"
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328250
