Title :
Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces
Author :
I-Hsing Tan;C. Reaves;J.J. Dudley;A.L. Holmes;D.I. Babic;E.L. Hu;J.E. Bowers;S. DenBaars
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.
Keywords :
"Bonding","Indium phosphide","Optical materials","Gallium arsenide","Optical microscopy","Solid state circuits","Ohmic contacts","Scanning electron microscopy","Electron optics","Reflectivity"
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328311
