Microwave Electric Field Semiconductor Transducer

The hot carrier microwave electric field semiconductor transducer structure called an open electric field detector is presented. It is destined for microwave power control on the long duration operating conditions in waveguide transmitting lines. Transducer V-W sensitivity is 1 mV/W and 0.09 mV/W in X and K bands respectively. The temperature coefficient of output emf is K1 = 0.008 K?1. Possibility to reduce temperature dependence of the fixed microwave power is discussed. VSWR is 1.3-1.3 in K band and less than 1.1 in X band. Transducer time constant RC = 10?7 s. It can operate with pulse modulated signal as well as with unmodutated one.