• DocumentCode
    3624481
  • Title

    Microstructure of HfO2 and HfxSi1-xOy Dielectric Films Prepared on Si for Advanced CMOS Application

  • Author

    M. Franta;A. Rosova;M. Tapajna;E. Dobrocka;K. Frohlich

  • Author_Institution
    Institute of Electrical Engineering, Centre of Excellence CENG, SAS, D?bravsk? cesta 9, 841 04 Bratislava, Slovak Republic
  • fYear
    2006
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    We analyzed microstructure of as-deposited and rapid thermal annealed HfO2 and HfxSi1-xOy dielectric films with Ru gate electrode. As-deposited films exhibited dielectric constant 12 and 20 for HfxSi1-xOy and HfO2, respectively. TEM and grazing incidence XRD revealed that as-deposited HfO2 films have polycrystalline character, while HfxSi1-xOy films are amorphous. Rapid thermal annealing makes favourable growth of monoclinic HfO2 phase in HfO2 films and tetragonal or orthorhombic phase in HfxSi1-xOy films
  • Keywords
    "Microstructure","Hafnium oxide","Dielectric films","Electrodes","Semiconductor films","Rapid thermal annealing","Dielectric constant","Thermal stability","Voltage","Capacitance-voltage characteristics"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331150
  • Filename
    4133074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624481