• DocumentCode
    3624486
  • Title

    RF characterization and modeling of AlGaN/GaN based HFETs and MOSHFETs

  • Author

    A. Fox;M. Marso;G. Heidelberger;P. Kordos

  • Author_Institution
    Center of Nanoelectronic Systems for Information Technology and Institute of Bio- and Nanosystems, Research Center J?lich, D-52425 J?lich, Germany. e-mail: A.Fox@fz-juelich.de
  • fYear
    2006
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    An increased RF-performance of heterojunction field-effect transistor was found to be due to passivation and in addition a SiO2 insulation underneath the gate metallization. This leads to an increase of cutoff frequency from 17 GHz up to 24 GHz for devices with 500 nm gate length. The RF output power increased from 4.1 to 6.7 W/mm at 7 GHz. RF simulation based on measured S-parameter showed a decrease of gate-source-capacitance and transconductance for devices with a dielectric layer underneath the gate metallization. The increase of the ratio gm/Cgs of about 25% is in agreement with the measured cutoff frequency ft
  • Keywords
    "Radio frequency","Aluminum gallium nitride","Gallium nitride","HEMTs","MODFETs","MOSHFETs","Metallization","Cutoff frequency","Dielectric measurements","Heterojunctions"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2006. ASDAM ´06. International Conference on
  • Print_ISBN
    1-4244-0369-0
  • Type

    conf

  • DOI
    10.1109/ASDAM.2006.331166
  • Filename
    4133090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3624486