• DocumentCode
    3626752
  • Title

    Modelling Power Schottky Diodes

  • Author

    Janusz Zarebski;Jacek Dabrowski

  • Author_Institution
    Gdynia Maritime University, Department of Marine Electronics, Morska Str. 81-87, 81-225 Gdynia, POLAND. E-mail: zarebski@am.rgdynia.pl
  • fYear
    2006
  • Firstpage
    90
  • Lastpage
    93
  • Abstract
    This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromode) of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.
  • Keywords
    "Schottky diodes","Silicon carbide","Semiconductor diodes","SPICE","Isothermal processes","Electrothermal effects","Temperature","Breakdown voltage","Semiconductor process modeling","Schottky barriers"
  • Publisher
    ieee
  • Conference_Titel
    Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006. TCSET 2006. International Conference
  • Print_ISBN
    966-553-507-2
  • Type

    conf

  • DOI
    10.1109/TCSET.2006.4404454
  • Filename
    4404454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3626752