Title :
Microwave Characterization and Properties of 2μm Gate Length AlGaN/GaN HEMT Structures
Author :
Martin Tomaska;Tibor Lalinsky;Gabriel Vanko;Martin Misun
Author_Institution :
Dept. of Microelectronics, Slovak University of Technology, Ilkovi?ova 3, 81219 Bratislava, Slovak Republic, tomaska@elf.stuba.sk
fDate :
4/1/2008 12:00:00 AM
Abstract :
The paper reports the properties of AlGaN/GaN HEMT fabricated on sapphire substrate. Using 2 mum length of gate electrode 6.67 GHz transition frequency as well as 24.5 GHz maximum frequency of oscillation was achieved. Small-signal model was identified. The transistor transconductance is in the range of 170 mS/mm. However the transistor was intended for structure and technology verification, it could be used in RF circuits. To improve HEMT´s microwave properties, gate length and source-drain distance shortening are in progress.
Keywords :
"Aluminum gallium nitride","Gallium nitride","HEMTs","Microwave transistors","Substrates","Microwave devices","Ohmic contacts","Microwave technology","Frequency","Transconductance"
Conference_Titel :
Microwave Techniques, 2008. COMITE 2008. 14th Conference on
Print_ISBN :
978-1-4244-2137-4
DOI :
10.1109/COMITE.2008.4569952
