Title :
SOI vs. bulk FinFET: Body doping and corner effects influence on device characteristics
Author :
Mirko Poljak;Vladimir Jovanovic;Tomislav Suligoj
Author_Institution :
Faculty of Electrical Engineering and Computing, University of Zagreb, HR-10000, Croatia
Abstract :
SOI and bulk FinFET were analyzed by a three-dimensional numerical device simulator and their electrical characteristics were compared for different body doping and bias conditions. Subthreshold and on-state performance have been examined and higher drain current in case of SOI FinFET has been explained by investigating enhanced conduction in silicon-oxide interface corners.
Keywords :
"FinFETs","Doping","Logic gates","Threshold voltage","Electric potential","Three dimensional displays","Junctions"
Conference_Titel :
Electrotechnical Conference, 2008. MELECON 2008. The 14th IEEE Mediterranean
Print_ISBN :
978-1-4244-1632-5
Electronic_ISBN :
2158-8481
DOI :
10.1109/MELCON.2008.4618472
